b120 thru b160 document number 88946 23-dec-05 vishay general semiconductor www.vishay.com 1 do-214ac (sma) new product surface mount schottky barrier rectifier major ratings and characteristics i f(av) 1.0 a v rrm 20 v to 60 v i fsm 30 a v f 0.52 v, 0.75 v t j max. 125 c, 150 c features ? low profile package ? ideal for automated placement ? guardring for overvoltage protection ? low power losses, high efficiency ? low forward voltage drop ? meets msl level 1, per j-std-020c ? solder dip 260 c, 40 seconds typical applications for use in low voltage, high frequency inverters, free- wheeling, dc-to-dc converters, and polarity protection applications. mechanical data case: do-214ac (sma) epoxy meets ul-94v-0 flammability rating terminals: matte tin plated (e3 suffix) leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade. polarity: color band denotes the cathode end maximum ratings t a = 25 c unless otherwise specified parameter symbol b120 b130 b140 b150 b160 unit device marking code b12 b13 b14 b15 b16 v maximum repetitive peak reverse voltage v rrm 20 30 40 50 60 v maximum average forward rectified current at t l (see fig. 1) i f(av) 1.0 a peak forward surge current 8.3 ms single half sine- wave superimposed on rated load i fsm 30 a voltage rate of change (rated v r ) dv/dt 10000 v/s operating junction temperature range t j - 65 to + 125 - 65 to + 150 c storage temperature range t stg - 65 to + 150 c
www.vishay.com 2 document number 88946 23-dec-05 b120 thru b160 vishay general semiconductor electrical characteristics t a = 25 c unless otherwise specified notes: (1) pulse test: 300 s pulse width, 1 % duty cycle thermal characteristics t a = 25 c unless otherwise specified notes: (1) p.c.b. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol b120 b130 b140 b150 b160 unit maximum instantaneous forward voltage at 1.0 a (1) v f 0.52 0.75 v maximum reverse current at rated v r (1) t a = 25 c i r 0.2 ma t a = 100 c 6.0 5.0 parameter symbol b120 b130 b140 b150 b160 unit typical thermal resistance (1) r ja r jl 100 35 c/w figure 1. forward current derating curve b120~b140 b150~b160 0 25 50 75 100 125 150 175 1.5 1 0.5 0 lead temperat u re (c) a v erage for w ard c u rrent figure 2. maximum non-repetitive peak surge current at rated t l 8 .3 ms single half sine- w a v e 1 10 100 nu m b er of cycles at hz peak for w ard s u rge c u rrent (a) 40 30 20 10 0
b120 thru b160 document number 88946 23-dec-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics tj = 150 c tj = 100 c tj = 125 c tj = 25 c p u lse w idth = 300 u s 1 % d u ty cycle 0 0.2 0.4 0.6 0. 8 1 1.2 1.4 1.6 100 10 1 0.1 0.01 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) b120~b140 b150~b160 tj = 150 c tj = 100 c tj = 125 c tj = 25 c b120~b140 b150~b160 10 20 30 40 50 60 70 8 0 90 100 percent of rated peak re v erse v oltage ( % ) 10000 1000 100 10 1 0.1 0.01 instan taneo u s re v erse c u rrent (ma) figure 5. typical junction capacitance t j = 25 c f = 1.0 mhz v sig = 50m v p-p 0.1 1 10 100 1000 100 10 re v erse v oltage ( v ) j u nction capacitance (pf) b120~b140 b150~b160 0.157 (3.99) 0.177 (4.50) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.203) 0.194 (4.93) 0.20 8 (5.2 8 ) 0.100 (2.54) 0.110 (2.79) 0.07 8 (1.9 8 ) 0.090 (2.29) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) 0.074 max. (1. 88 max.) 0.20 8 (5.2 8 ) ref 0.066 mi n . (1.6 8 mi n .) 0.060 mi n . (1.52 mi n .) mountin g pad layout
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